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Method for image enhancement in positive photoresist by vapor diffusion image reversal

机译:通过气相扩散图像反转增强正性光刻胶图像的方法

摘要

An image reversal method for forming a negative image on a surface using positive photoresist material includes the first step of coating the positive photoresist material on the surface, and soft baking the photoresist or the like to form a uniform layer on the surface. The photoresist layer is then exposed by actinic radiation through a mask or the like in image forming fashion, the exposed portions reacting to form a carboxylic acid or other acid which is soluble in aqueous base solutions. The photoresist is then exposed to a treatment with a vapour of chemical base (e.g. of an amine; tetramethylammonium hydroxide, triethanolamine or ammonia) which renders the acid insoluble to alkali solutions and relatively insensitive to further light exposure. The vapor treatment is followed by a flood exposure of the entire surface to render soluble the photoresist portions which were originally unexposed by the mask. The photoresist is then developed by immersion in an alkali developer to remove the flood exposed portions. The remaining photoresist areas comprise the mask exposed portions in relief from the surface and defining the negative image of the original mask exposure.
机译:使用正性光致抗蚀剂材料在表面上形成负像的图像反转方法包括第一步,将正性光致抗蚀剂材料涂覆在表面上,然后软烘烤光致抗蚀剂等以在表面上形成均匀的层。然后,光致抗蚀剂层通过光致辐射通过掩模等以图像形成方式曝光,曝光部分反应形成可溶于碱水溶液的羧酸或其他酸。然后将光致抗蚀剂用化学碱蒸汽(例如胺;氢氧化四甲铵,三乙醇胺或氨)进行处理,这使酸不溶于碱溶液,并且对进一步的曝光相对不敏感。蒸气处理之后是整个表面的泛光曝光,以使最初未被掩模曝光的光致抗蚀剂部分溶解。然后将光致抗蚀剂浸入碱显影剂中以除去溢流曝光部分,从而对其进行显影。剩余的光致抗蚀剂区域包括从表面起伏的掩模曝光部分,并限定了原始掩模曝光的负像。

著录项

  • 公开/公告号GB2171530A

    专利类型

  • 公开/公告日1986-08-28

    原文格式PDF

  • 申请/专利权人 * IMTEC PRODUCTS INC;

    申请/专利号GB19850018585

  • 发明设计人 CRAIG M * STAUFFER;ERIC * ALLING;

    申请日1985-07-23

  • 分类号G03C1/52;

  • 国家 GB

  • 入库时间 2022-08-22 07:30:28

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