首页>
外国专利>
MOS static ram with capacitively loaded gates to prevent alpha soft errors
MOS static ram with capacitively loaded gates to prevent alpha soft errors
展开▼
机译:具有容性负载门的MOS静态ram可以防止alpha软错误
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device in which a logic information can be held stably without being influenced by &agr;-rays, is disclosed. The major feature of the device resides in that a capacitor is provided at a control terminal of a transistor holding a logic information thereby to increase an effective capacitance of the control terminal.
展开▼