GLASSY TIO2 POLYMER FILMS AS ELECTRON BEAM CHARGE DISSIPATION LAYERS

摘要

The use of TiO.sub.2 spin-on glass films for reduction of electrostatic charging of a semiconductor substrate upon electron beam exposure is described. Specifically, the disclosure relates to electron beam lithographic processing during semiconductor device or mask fabrication. The TiO.sub.2 glass films may also be utilized for charge dissipation during ion implantation. A thin TiO.sub.2 composition spin-on glass film is used as a charge dissipation layer. This mechanism is effective as a resolution enhancement mechanism during electron beam or ion beam processing of semiconductors. The TiO.sub.2 composition films are prepared from spin-on materials that consist of partially hydrolyzed organotitanium species dissolved in organic solvents which produce glassy films of TiO.sub.2 upon application to silicon and other substrates and subsequent heating. The films are completely amorphous, have extremely low pinhole and particulate densities, are uniform in thickness and free of radial striations. These spin-cast films do not exhibit the moisture sensitivity typical of TiO.sub.2 produced from other liquid sources.