首页>
外国专利>
Growth of single crystal Cadmium-Indium-Telluride
Growth of single crystal Cadmium-Indium-Telluride
展开▼
机译:单晶镉铟碲化物的生长
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for producing a large high-quality single crystal of Cadmium- Indium-Telluride is disclosed wherein a stoichiometric crystal is produced from a non-stoichiometric melt composition. An initial melt composition corresponding to approximately 62 mole % to 90 mole % In.sub. 2 Te.sub.3 and 38 mole % to 10 mole % CdTe, respectively, is prepared and sealed in an evacuated ampoule and then heated to completely melt the mixture. Growth of a single crystal of CdIn.sub.2 Te.sub.4 is initiated and maintained from the non-stoichiometric melt mixture by lowering the melt through its corresponding phase-equilibrium melting point. Upon cooling to room temperature, the large single crystal so produced is removed from the ampoule.
展开▼
机译:公开了一种生产大型高质量的碲化镉铟单晶的方法,其中由非化学计量的熔融组合物生产化学计量的晶体。初始熔体组成对应于约62摩尔%至90摩尔%的In.sub.。分别制备2 Te 3和38摩尔%至10摩尔%的CdTe,并将其密封在抽空的安瓿瓶中,然后加热以完全熔化混合物。通过降低熔体至其相应的相平衡熔点,从非化学计量的熔体混合物中引发并维持CdIn.sub.2 Te.sub.4单晶的生长。冷却至室温后,将如此产生的大单晶从安瓿瓶中取出。
展开▼