ARSENIDE GALIUM EPITAXIAL WAFER AND MANUFACTURE THEREOF

摘要

PURPOSE:To form a GaAs epitaxially grown layer of excellent crystallizability by a method wherein an intermediate layer is composed of a GaP layer, a superlattice layer of GaP and GaAsP, and another superlattice layer of GaAsP and GaAs. CONSTITUTION:After an N-type single crystal silicon substrate 10 is annealed by heating it at 950 deg.C for 10min, the first intermediate layer 31 consisting of GaP, for which growing temperature is maintained at 900 deg.C, the second intermediate layer 32 consisting of GaP and GaAsP of the mixed crystal ratio of 0.5, for which growing temperature is maintained at 830 deg.C, and the third intermediate layer 33 consisting of GaAsP of mixed crystal ratio of 0.5, for which growing temperature is maintained at 830 deg.C, are formed successively by performing an epitaxial growing method. Then, a GaAs epitaxial layer 50 is formed on the first, second and third intermediate layers 31, 32 and 33 by maintaining the growing temperature at 650 deg.C.