METHOD OF INCREASE HEIGHT OF BARRIER AND SCHOTTKY BARRIER

摘要

Increased barrier heights at metal(36)-semiconductor(32) contacts for semiconductors such as gallium arsenide by formation of an opposite doping type thin layer (34) on the semiconductor (32) surface by surface diffusion of dopants are disclosed. Preferred embodiments diffuse zinc 50 to 400 Å into n type gallium arsenide (32) by rapid thermal pulses; then aluminum or titanium-platinum (36) contacts to the zinc doped layer (34) are deposited by evaporation and lift off.