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PREPARATION OF DRY ETCHING RESISTANT BOTH POSITIVE AND NEGATIVE TYPE PHOTORESIST

机译:正负型防干蚀光敏抗蚀剂的制备

摘要

PURPOSE:To obtain a dry etching resistant photoresist usable as both of negative and positive types by successively laminating a photosensitive resin composition layer composed of a substance having quinonediazide structures and a silicone rubber layer, imagewise exposing it, and processing it with a base. CONSTITUTION:7503The photosensitive resin composition layer composed of a substance having quinone diazide structures, and the silicone rubber layer are successively laminated to form the photoresist for use in micropattern forma tion necessary for fabrication of semiconductors, magnetic bubble memory elements, integrated circuits, and the like. The photoresist is imagewise exposed and processed with a base, thus permitting dry etching resistance usable for both of negative and positive types to be obtained.
机译:用途:通过依次层压由具有醌二叠氮化物结构的物质组成的光敏树脂组合物层和硅橡胶层,进行成像曝光,并用基材进行处理,从而获得可同时用作负型和正型的抗干蚀刻性光刻胶。组成:7503由具有醌二叠氮化物结构的物质组成的光敏树脂组合物层和硅橡胶层相继层压,形成光刻胶,用于制造半导体,磁性气泡存储元件,集成电路和半导体等所需的微图案形成。喜欢。将光致抗蚀剂成像曝光并用碱进行处理,从而允许获得可用于负型和正型的干法耐蚀刻性。

著录项

  • 公开/公告号JPS61270755A

    专利类型

  • 公开/公告日1986-12-01

    原文格式PDF

  • 申请/专利权人 TORAY IND INC;

    申请/专利号JP19850112084

  • 发明设计人 IWAMOTO MASAO;

    申请日1985-05-27

  • 分类号G03C1/00;G03C5/18;G03F7/004;G03F7/38;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 07:23:21

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