MOLECULAR BEAM EPITAXY METHOD FOR III-V COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To highly reproducibly grow a semiconductor crystal having excellent electrical and optical characteristics on the surface of a flat and clean substrate by heating the substrate, irradiating a group-III molecular beam and a group-V molecular beam on the surface of the substrate consisting of a III-V compd. and preventing the dissociation. CONSTITUTION:The substrate 2 consisting of the III-V compd. semiconductor (e.g., InP) fixed to a substrate holder 1 in a molecular beam epitaxy device is slowly heated by a heater 3 from room temp. to about 350 deg.C. Then an As shutter 4 is opened and a group-V (e.g., As) molecular beam is irradiated from its molecular beam source 5, while the substrate 2 is heated. When the substrate is heated to about 520 deg.C, an In shutter 6 is opened, a minute dose of a group-III molecular beam in about the same number of atoms as that of the atoms dissociated from the group-III element (e.g., In) is irradiated from its molecular beam source 7, and further the substrate 2 is heated and kept at about 600 deg.C. Then the substrate 2 is cooled to about 500 deg.C, the shutter 6 is closed, a Ga shutter 8 and an In shutter 10 are opened to irradiate, for example, a Ga molecular beam from its molecular beam source 9 and to irradiate an In molecular beam from the molecular beam source 11, and an InGaAs crystal is grown.