首页> 外国专利> PRODUCTION OF BAPBO3 BASED OXIDE SUPERCONDUCTOR SINGLE CRYSTAL BY SOLUTION PULLING UP METHOD

PRODUCTION OF BAPBO3 BASED OXIDE SUPERCONDUCTOR SINGLE CRYSTAL BY SOLUTION PULLING UP METHOD

机译:溶液上拉法制备BAPBO3基氧化物超导体单晶

摘要

PURPOSE:To obtain a large-sized single crystal having a sufficient thickness, by depositing a BaPbO3 based microcrystal while decreasing the temperature of a mixed melt of PbO, BaCO3 and BaCl2 as a main raw material and growing the microcrystal on a seed crystal. CONSTITUTION:PbO is mixed with BaCO3 and BaCl2 at a desired ratio. BiO2 is further mixed therewith as necessary. A melt of the resultant mixture is prepared and as a starting material 7 put into a crucible 8 and melted by induction heating with a high-frequency heating coil 4. A single crystal 6 which is seed crystal of BaPb1-xBixO3 and mounted on the tip of a platinum shaft 2 is brought into contact with the melt surface. When the melt temperature is slowly decreased, a microcrystal of BaPb1-xBixO3 is deposited by portions in the interface of the melt on contact with the single crystal 6 and grown on the single crystal 6. The grown single crystal is then pulled up from the melt while rotating the single crystal.
机译:目的:通过沉积基于BaPbO3的微晶,同时降低作为主要原料的PbO,BaCO3和BaCl2的混合熔体的温度,并在籽晶上生长微晶,以获得具有足够厚度的大型单晶。组成:PbO与BaCO3和BaCl2以所需比例混合。根据需要将BiO 2进一步混合。制备所得混合物的熔体,并将其作为起始原料7放入坩埚8中,并通过高频加热线圈4通过感应加热使其熔融。单晶6是BaPb1-xBixO3的籽晶并安装在尖端上铂轴2的一部分与熔体表面接触。当熔体温度缓慢降低时,BaPb1-xBixO3的微晶在与单晶6接触时在熔体界面中部分沉积,并在单晶6上生长。然后将生长的单晶从熔体中拉出。同时旋转单晶。

著录项

  • 公开/公告号JPS623092A

    专利类型

  • 公开/公告日1987-01-09

    原文格式PDF

  • 申请/专利权人 AGENCY OF IND SCIENCE & TECHNOL;

    申请/专利号JP19850143189

  • 发明设计人 OKA KUNIHIKO;

    申请日1985-06-28

  • 分类号C30B15/00;C30B29/22;C30B29/24;H01L21/208;

  • 国家 JP

  • 入库时间 2022-08-22 07:21:59

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