首页> 外国专利> Chromium plating process for producing non-iridescent, adherent, bright chromium deposits at high efficiencies and substantially free of cathodic low current density etching.

Chromium plating process for producing non-iridescent, adherent, bright chromium deposits at high efficiencies and substantially free of cathodic low current density etching.

机译:铬镀层工艺可高效生产非虹彩,附着力强的亮铬沉积层,并且基本无阴极低电流密度蚀刻。

摘要

A chromium plating bath and process for producing a non-iridescent, adherent, bright chromium deposit at high efficiencies and high temperatures under conditions such that the process is substantially free of cathodic low current density etching. The bath consists essentially of chromic acid and sulfate in predetermined concentrations, and an organic sulfonic acid or salts thereof, where the ratio of S to C is /=1/3, e.g. methyl, ethyl and propyl sulfonic acid, and methane and 1,2-ethane disulfonic acid. The bath is substantially free of carboxylic acids, phosphonic acids, perfluoroloweralkyl sulfonic acids, and halides.
机译:铬镀浴和方法,用于在一定条件下以高效率和高温生产非虹彩,附着性亮铬镀层,使得该方法基本无阴极低电流密度蚀刻。该浴基本上由预定浓度的铬酸和硫酸盐,以及一种有机磺酸或其盐组成,其中S与C之比≥1/ = 1/3,例如大于或等于1/3。甲基,乙基和丙基磺酸,以及甲烷和1,2-乙烷二磺酸。该浴基本上不含羧酸,膦酸,全氟低级烷基磺酸和卤化物。

著录项

  • 公开/公告号ES8705931A1

    专利类型

  • 公开/公告日1987-05-16

    原文格式PDF

  • 申请/专利权人 M & T CHEMICALS INC.;

    申请/专利号ES19860553393

  • 发明设计人

    申请日1986-03-25

  • 分类号C25D3/66;

  • 国家 ES

  • 入库时间 2022-08-22 07:17:07

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