ITO / n-Si solar cell and its fabrication method using electron beam heating method

摘要

The ITO/n-Si solar cell is made by following steps; (1) forming insulation layer (c) of n type Si wafer (b) by oxidizing at 500C for 5 min under atmosphere, (2) forming ITO membrane (d) on (c) by depositing ITO vapor at an incidence angle of 50, (3) heat-treating (d) at 300C for 30 min under atmosphere, and (4) depositing metal electrodes (a) and (e) in a thickness of 10000 on the upper (d) and lower surface (b) of the substrate.