首页> 外国专利> Circuit arrangement for overcurrent limiting in an invertor having power semiconductors, for example GTO thyristors, which can be turned off

Circuit arrangement for overcurrent limiting in an invertor having power semiconductors, for example GTO thyristors, which can be turned off

机译:在具有功率半导体的逆变器中用于过流限制的电路装置,例如功率半导体,可关断的GTO晶闸管

摘要

In the case of an invertor, the series circuit of two GTO thyristors (T1, T2) with a circuitry inductor (LS) is located between the two DC voltage potentials of said invertor and the AC voltage connection is arranged in the connection of the two GTO thyristors (T1, T2). The series circuit of a circuitry capacitor (CS) with a first circuitry diode (DS1) is connected in parallel with the one GTO thyristor (T1). A device which absorbs the excess circuitry energy is connected in series with a storage capacitor (C0) between the DC voltage potentials of the invertor. In this case, the one pole of the storage capacitor (C0) is connected via a second circuitry diode (DS2) to the connection between the circuitry capacitor (CS) and the first circuitry diode (DS1). It is intended to prevent an overcurrent occurring in the event of erroneous, simultaneous triggering of the two GTO thyristors (T1, T2). For this purpose, the storage capacitor (C0) is decoupled from the DC voltage potential by a third circuitry diode (DS3) and a protective tuned circuit, consisting of a protection thyristor (TK1) which can be triggered immediately in the event of overcurrent, an inductor coil (LK2) and a precharged capacitor (CK), is connected in parallel with the invertor input. IMAGE
机译:对于逆变器,两个GTO晶闸管(T1,T2)和一个电路电感器(LS)的串联电路位于该逆变器的两个直流电压电位之间,并且交流电压连接布置在两个逆变器的连接中GTO晶闸管(T1,T2)。具有第一电路二极管(DS1)的电路电容器(CS)的串联电路与一个GTO晶闸管(T1)并联连接。吸收多余电路能量的设备与存储电容器(C0)串联连接在逆变器的直流电势之间。在这种情况下,存储电容器(C0)的一个极经由第二电路二极管(DS2)连接至电路电容器(CS)与第一电路二极管(DS1)之间的连接。它旨在防止在错误同时触发两个GTO晶闸管(T1,T2)时发生过电流。为此,存储电容器(C0)通过第三电路二极管(DS3)和由保护晶闸管(TK1)组成的保护性调谐电路与直流电压去耦,该保护性晶闸管(TK1)在发生过电流时可立即触发,电感线圈(LK2)和预充电电容器(CK)与逆变器输入并联。 <图像>

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