Brief description of the first embodiment, in an ultrahigh vacuum, which makes it possible to obtain a modulation of the composition in the plane of the layer filed or the selective deposition of the layer on certain zones of a substrate.

摘要

The process consists in directing onto a heated substrate a flow of the element(s) forming the said layer, characterised in that the substrate is heated by means of a laser beam so that a modulation of temperature is obtained on the surface of the substrate, some regions of the substrate being raised to a temperature T and the other regions of the substrate being raised to a temperature T+ DELTA T. Application to the selective epitaxy of GaAs.