METHOD FOR MANUFACTURING ISLE GRID FIELD EFFECT TRANSISTOR

摘要

P Firstly, a semiconductor substrate 1, for example gallium arsenide, is covered with a layer 2 intended to form an n-channel region and a portion of this region is covered by a passivation layer 3a. In the free zones of the surface of the semiconductor device, disturbance points are implanted which form source and drain regions 5, 11 which are strongly doped below the channel region. A surface layer is then removed from the passivation layer 3a in the region adjacent to the source zone 5 and a grid 10 is placed on the narrow zone Lg2 thus released from the channel region. BR/ (CF DRAWING IN BOPI) BR/ BR/ / P