Electrical organic thin film switching device switching between detectably different oxidation states

摘要

A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.