首页> 外国专利> Apparatus for distributing the head load to the first wall from the plasma in an OTHE-type high-energy plasma device

Apparatus for distributing the head load to the first wall from the plasma in an OTHE-type high-energy plasma device

机译:用于在OTHE型高能等离子体装置中将头部的负荷从等离子体分配到第一壁的装置

摘要

Apparatus for containing plasma in a high energy plasma device includes a vacuum tight liner wall made up, at least in part, by a series of sections each having a closed peripheral wall defining an interior with open ends. Adjacent sections form a plasma path with each section having an inside surface and an outside surface with the interior of the section being generally circular in cross section. A magnet system is provided which includes first conductors positioned outside the section for generating a magnetic field extending inside the section. An armature ring is positioned inside the section with the ring having rollers for engaging the inside surface of the section. The ring also includes current carrying armature conductors extending at an angle to the lines of force of the magnetic field. Armor tiles are carried by the ring facing the plasma path for acting as plasma limiters so that the interaction of magnetic field and the current in the armature conductors causes rotation of the armature ring to prevent damage to the liner wall due to localized heating. A method for protecting a vacuum tight liner wall in a high energy device is also disclosed.
机译:用于在高能等离子体装置中容纳等离子体的设备包括真空密封衬里壁,该真空密封衬里壁至少部分地由一系列部分组成,每个部分都具有封闭的外围壁,该外围壁限定了具有开口端的内部。相邻的部分形成等离子体路径,每个部分具有内表面和外表面,并且该部分的内部的横截面通常为圆形。提供了一种磁体系统,其包括位于所述部分外部的第一导体,用于产生在所述部分内部延伸的磁场。电枢环位于该部分的内部,该环具有用于接合该部分的内表面的滚子。该环还包括载流电枢导体,该载流电枢导体相对于磁场的力线成一定角度延伸。护甲瓦由面对等离子路径的环承载,用作等离子限制器,因此磁场和电枢导体中的电流的相互作用导致电枢环旋转,以防止由于局部加热而损坏衬管壁。还公开了一种用于保护高能装置中的真空密封衬里壁的方法。

著录项

  • 公开/公告号US4654182A

    专利类型

  • 公开/公告日1987-03-31

    原文格式PDF

  • 申请/专利权人 GA TECHNOLOGIES INC.;

    申请/专利号US19850767775

  • 发明设计人 JAMES R. DAOUST;

    申请日1985-08-20

  • 分类号G21B1/00;

  • 国家 US

  • 入库时间 2022-08-22 07:09:27

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