Method of controlling the modeling of the well energy band profile by interdiffusion

摘要

The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component therein compared to the level of content thereof in semiconductor layers immediately adjacent thereto. The disordering components are Al and Ga in the GaAs/GaAlAs regime.