Forming monolithic planar opto-isolators by selective implantation and proton bombardment

摘要

Disclosed are novel opto-isolator devices and processes for fabricating same wherein suitable semiconductive substrates, such as galium arsenide wafers, are treated with conductivity type determining impurities in such a manner as to form radiation emitters, radiation detectors and interconnecting waveguides therein. These operative regions which form a monolithic opto-isolator have the necessary electro-optical characteristics for generating and coupling radiation from the emitter and through the waveguide coupler to the detector; and all of these regions may be integrally fabricated in a monolithic batch fabrication process. Such process may use, for example, particle implantation and masking steps, thereby ensuring high yield and low cost device fabrication.