PRODUCTION OF SILICON CARBIDE WHISKER OF HIGH-QUALITY AND APPARATUS THEREFOR

摘要

PURPOSE:To economically obtain a SiC whisker in high yield, by subjecting a mixed powder of carbonaceous powder and SiO2 powder and a gas of compound containing transition metal to plasma treatment using a high-frequency electromagnetic field and decomposing above-mentioned gas. CONSTITUTION:A raw material 2 consisting of a carbonaceous powder such as carbon black, etc., and SiO2 powder such as silica powder, etc., is placed on a stand made of porous ceramic and the stand is then arranged on an inner tube 5 in a reaction tube 1 and set. Then, the inside of the tube 1 is substituted by an inert gas such as Ar, etc. and evacuated and a high-frequency plasma is induced into the tube 1 by applying high-frequency voltage to coil 3 from a high-frequency power source 11. Further, a carrier gas such as Ar gas, etc., is passed through a bubbler 6 to gasify a liquid transition metal compound A, e.g. Fe(C6H5)2, etc., and the gasified compound A is introduced into the tube 1. Then, the gas of said metal compound A is decomposed in the plasma in the tube 1 to form a superfines of the transition metal. The superfines work as a catalyst in above-mentioned mixed powder and promote the reaction expressed by the equation; SiO2+3C SiC+2CO to provide the aimed silicon carbide whisker.