Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide

摘要

A semiconductor laser diode (10) includes two semiconductive cladding layers (14, 18) of different conductivity types, which are stacked on a substrate (12). An active layer (16) of an undoped semiconductor film is sandwiched between the cladding layers (14, 18). A channel groove (22) is formed in a current blocking layer (20) and the underlying cladding layer (18), to be deep enough to cause the current blocking layer (20) to be divided into two parts. A waveguide layer (24) covers the channel groove (22) and the current-blocking layer (20), to provide a slab-coupled waveguide structure for transverse mode oscillation. The second cladding layer (18), the current-blocking layer (20), and the waveguide layer (24) are composed of gallium arsenide containing aluminum.