Brief description of embodiments of at least one deep layer in a device has a semi conducting -

摘要

Of a semi - driver device according to which it is carried out of the components semi - conductors in the regions 6a, 7a, 11a formed in a layer epitaxial 13 by diffusion from one or more layers buried 6, 7, 11. In accordance with the invention, the diffusion so as to leave the - top of the (of) layer (s) buried (s) a surface layer 13a having substantially the same level as the original epitaxial layer 13 and serving as reference for the doping of a field effect transistors and a gate isolee for performing. The present invention is of a magnitude particular for the determination of the threshold voltage, in cmos circuits comprising regions "twin - tub " input 6a, 11a disseminated from layers buried of opposite types. / p & & p & application: the manufacture of semi-finished - conductors.