Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range

摘要

A blocking layer is formed of amorphous silicon carbide (a- Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1×10.sup.-6 to 1×10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1×10.sup.-6 to 1. times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 5 &mgr;m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.