首页> 外国专利> Positive-working photoresist elements containing anti-reflective butadienyl dyes which are thermally stable at temperatures of at least 200amp;deg; C.

Positive-working photoresist elements containing anti-reflective butadienyl dyes which are thermally stable at temperatures of at least 200amp;deg; C.

机译:包含抗反射丁二烯染料的正性光致抗蚀剂元件,其在至少200°C的温度下具有热稳定性。

摘要

Positive-working photoresist elements are protected against reflection of activating radiation from the substrate by incorporation of certain butadienyl dyes in a photoresist layer, an anti-reflective layer or a planarizing layer. These dyes have superior resistance to thermal degradation or volatilization at temperatures of as high as 200° C. or more. The dyes also exhibit good solubility in solvents commonly employed in processing semiconductor devices, thus permitting the dyes to be incorporated in photoresist elements in an amount sufficient to prevent resist image distortion caused by backscattered or reflected light.
机译:通过在光致抗蚀剂层,抗反射层或平坦化层中掺入某些丁二烯基染料,可以保护正性光致抗蚀剂元件免受活化辐射的反射。这些染料在高达200℃或更高的温度下具有优异的抗热降解或挥发性。染料在处理半导体器件中通常使用的溶剂中也显示出良好的溶解性,因此允许将染料以足以防止由反向散射或反射光引起的抗蚀剂图像变形的量掺入光致抗蚀剂元件中。

著录项

  • 公开/公告号US4719166A

    专利类型

  • 公开/公告日1988-01-12

    原文格式PDF

  • 申请/专利权人 EASTMAN KODAK COMPANY;

    申请/专利号US19860890220

  • 发明设计人 RICHARD W. BLEVINS;ROBERT C. DALY;

    申请日1986-07-29

  • 分类号G03C1/60;G03C1/84;

  • 国家 US

  • 入库时间 2022-08-22 06:49:36

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