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Extremely-high frequency semiconductor oscillator using transit time negative resistance diode
Extremely-high frequency semiconductor oscillator using transit time negative resistance diode
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机译:使用渡越时间负电阻二极管的超高频半导体振荡器
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摘要
An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.
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