Investigations as to the Noise Characteristics of GaAs Avalanche Transit Time Diode Oscillators.

摘要

Gallium arsenide p-n junction avalanche transit time oscillators were characterized with respect to noise performance. The results of these measurements were compared to other p-n junction oscillators,Read diodes,and Gunn diodes. Measurements include: receiver noise,using these devices as local oscillators for both balanced and single-ended mixer configurations;AM noise sideband-to-carrier ratios; FM noise sideband-to-carrier ratios,and AM and FM noise sideband-to-carrier ratios with cavity locking;thermal noise as a function of reverse bias current and amplifier noise figure. In general,the GaAs devices were superior in all respects to the Si- p-n and Si-Read structures. It also exhibited better FM noise than the Gunn oscillator and only slightly worse AM noise. (Author)