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Process of depositing diamond-like thin film by cathode sputtering

机译:阴极溅射沉积类金刚石薄膜的工艺

摘要

The present invention relates to a diamond-like thin film and a method of making the diamond-like thin film comprises causing sputtering by applying an electric power under a limited hydrogen pressure within a sputtering apparatus having a graphite target and forming on a substrate the diamond-like thin film composed an accumulation of particles of several nm to several 100 nm and having its surface enclosed with alkyl radicals whose carbon number is 3 or less and its interior provided with a diamond structure of a four coordinated carbon arrangement.
机译:金刚石类薄膜及其制造方法技术领域本发明涉及一种金刚石类薄膜及其制造方法,该方法包括通过在具有石墨靶的溅射装置中在有限的氢气压力下施加电力来进行溅射,并在基板上形成金刚石。状的薄膜由几nm至几百nm的颗粒的堆积物组成,并且其表面被碳数为3以下的烷基基团包围,并且其内部具有四配位碳排列的金刚石结构。

著录项

  • 公开/公告号US4767517A

    专利类型

  • 公开/公告日1988-08-30

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA MEIDENSHA;

    申请/专利号US19870020226

  • 发明设计人 TATSURO MIYASATO;AKIO HIRAKI;

    申请日1987-03-02

  • 分类号C23C14/34;

  • 国家 US

  • 入库时间 2022-08-22 06:48:44

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