METHOD FOR MAKING MATERIAL AMORPHOUS BY USE OF IMPLANTATION OF HETEROGENEOUS ATOM INTO SOLID BY ELECTRON BEAM

摘要

PURPOSE:To make atoms of an arbitrary kind amorphous by irradiating, from above, a thin film, which is composed of heterogeneous atoms and made to adhere to the crystal of a material, with an electron beam under prescribed conditions. CONSTITUTION:The thin film 1, A composed of heterogeneous atoms which is to be implanted into the material is made to adhere to the crystal 2, B of the material, which is irradiated with the electron beam 4 from the thin film 1, A side under prescribed irradiating conditions. This electron beam 4 has an energy enough to displace the thin film 1, A and it forces the thin film 1, A within the irradiation region to be implanted into the crystal 2, B to form a mixture layer. This mixture layer changes into an amorphous layer C when the concentration of the thin film 1, A comes to a certain value and above.