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HIGH-PURITY ALUMINUM NITRIDE ORDINARY-PRESSURE SINTERED COMPACT AND PRODUCTION THEREOF
HIGH-PURITY ALUMINUM NITRIDE ORDINARY-PRESSURE SINTERED COMPACT AND PRODUCTION THEREOF
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机译:高纯氮化铝常压烧结体及其生产
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摘要
PURPOSE:To obtain a high-purity AlN sintered compact having high density and excellent thermal conductivity and strength, by sintering an AlN powder having specific properties at ordinary pressure without adding any sintering auxiliary. CONSTITUTION:AlN powder having =3mu average particle size and =1.5wt.% O content and =0.3wt.% cation impurity is molded without adding any sintering auxiliary and the resultant moldings are sintered in a container consisting of AlN and/or BN moldings in ordinary-pressure N2 gas atmosphere at 1700-2100 deg.C to obtain the subject sinter compact having =3.225g/cm2 density or =99.0% relative density to theoretical density, =70W/m.K thermal conductivity at ambient temperature and =25kgf/mm2 flexural strength at 20 deg.C and 1200 deg.C.
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机译:目的:通过在常压下烧结具有特定性能的AlN粉末而不添加任何烧结助剂,以获得具有高密度,优异的导热性和强度的高纯度AlN烧结体。组成:在不添加任何烧结助剂的情况下模制平均粒径<=3μm,O含量== 1.5wt。%,阳离子杂质含量== 0.3wt。%的AlN粉末,然后将所得模制品在由AlN和/在1700-2100℃的常压N2气体气氛中进行BN或BN成型,以获得主题烧结体,其密度为> = 3.225g / cm 2或相对密度相对于理论密度> = 99.0%,> = 70W / mK在室温和20℃和1200℃下≥25kgf/ mm 2的抗弯强度下的热导率。
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