首页> 外国专利> SYNTHETIC METHOD OF CUBIC BORON NITRIDE SINGLE CRYSTAL

SYNTHETIC METHOD OF CUBIC BORON NITRIDE SINGLE CRYSTAL

机译:立方氮化硼单晶的合成方法

摘要

PURPOSE:To synthesize large and high quality CBN simple crystals in a short period of time by making BN from a BN feeding source dissolved in a solvent in contact with a BN existing surface only on a seed crystal of relatively low temperature. CONSTITUTION:The temperature of a seed crystal 2 side should be so lowered relatively by a graphite heater 7 as to be lower than the temperature of a contact face between a BN feeding source 3 and a solvent 4 such as LiSrBN2 or the like. BN from the BN feeding source 2 dissolved into the solvent 4 under the ultrahigh pressure and temperature of stabilized CBN is separated as CBN on the relative low temperature seed crystal 2. Said action is based on the difference of dissolving degrees of BN generated by the temperature difference. When CBN is separated on the seed crystal 2, single crystals are grown quickly only on a surface 2a of the seed crystal 2 where same numbers of B and N exist by covering with an inactive substance 5 such as molybdenum or the like in a manner not to be in contact with the solvent 4 except the surface 2a to grow.
机译:目的:通过将来自BN进料源的BN溶解在溶剂中,使其仅与相对低温的晶种接触,与BN存在的表面接触,从而在短时间内合成大质量的CBN单晶。构成:籽晶2侧的温度应通过石墨加热器7相对降低,使其低于BN进料源3与溶剂4(例如LiSrBN2等)之间的接触面温度。来自BN进料源2的BN在超高压和稳定的CBN的温度下溶解在溶剂4中,在相对低温的晶种2上被分离为CBN。所述作用基于温度所产生的BN的溶解度的差异。区别。当在籽晶2上分离CBN时,单晶仅通过以诸如钼等的惰性物质5覆盖的方式仅在存在相同数量的B和N的籽晶2的表面2a上快速生长。除了表面2a以外,与溶剂4接触而生长。

著录项

  • 公开/公告号JPH01210027A

    专利类型

  • 公开/公告日1989-08-23

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP19880033679

  • 发明设计人 DEGAWA JUNJI;TSUJI KAZUO;

    申请日1988-02-16

  • 分类号B01J3/06;

  • 国家 JP

  • 入库时间 2022-08-22 06:45:19

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