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PLASMA TREATING DEVICE AND PLASMA TEMPERATURE MEASURING METHOD
PLASMA TREATING DEVICE AND PLASMA TEMPERATURE MEASURING METHOD
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机译:等离子体处理装置及等离子体温度测量方法
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摘要
PURPOSE:To easily measure the temp. of a substrate surface during plasma treatment by comparing the distribution of the transition between the rotating quanta of nitrogen molecules during the plasma treatment with a calculated value. CONSTITUTION:Plasma is generated in a gaseous material contg. nitrogen atoms by a power supply 6 and an electrode 5 and the substrate is subjected to the plasma treatment in a plasma treatment chamber 17. The distribution of the transition between the rotating quanta of the nitrogen molecules during the plasma treatment is measured by a spectroscope 4 via a quartz lens 12 and an optical fiber 13. The data obtd. by the spectroscope 4 is recorded in a recorder 14 and the surface of the substrate is known in accordance with the data. The plasma treatment chamber is maintained in a normal state by increasing or decreasing the source power of a heater 9, changing the flow rate of gases, increasing or decreasing the electric power to generate the plasma, moving a power supply electrode 5 upward or downward or increasing or decreasing the conductance of a discharge system 16 via a controller in accordance with such data.
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