ETCHING OF TITANIUM CARBIDE FILM AND TITANIUM NITRIDE FILM

摘要

PURPOSE:To etch a titanium carbide film and a titanium nitride film stably at a fast etching rate and remove the films by performing plasma-dry-etching of the titanium carbide film and the titanium carbide film, to which hydrogen is doped, the titanium nitride film and the titanium nitride film, to which oxygen is doped, by using CF4 gas. CONSTITUTION:A substrate 5 on which a titanium carbide group film is laminated is exposed into plasma generated by applying a high-frequency field to CF4 gas introduced into a chamber 1 evacuated to a high vacuum once by employing a vacuum equipment and etched. Fluorine radicals are generated in plasma, and an outermost surface on which titanium carbide and titanium oxide mix is decomposed into TiF4, oxygen and hydrocarbon. A gaseous product containing titanium generated in the reaction process is sucked by a vacuum pump and removed. The titanium carbide group film after the outermost surface is gotten rid of is also etched similarly, and decomposed to a gaseous compound, thus accelerating etching. The same applies to the titanium nitride group film.