THIN FILM OF SILICON CONTAINING CRYSTALLITE AND ITS PREPARATION

摘要

PURPOSE:A thin film of Si wherein an amorphous part containing crystallite and an amorphous part containing no crystal are distributed in a constant order in two-dimensional way, obtained by applying a bias to a netlike grid having an arbitrary pattern set between an Si-containing glow-discharge plasma and a base plate. CONSTITUTION:A raw material gas consisting of a gas such as silane (e.g., SiH4) shown by the formula SinH2n+2 is diluted with H2 and/or a rare gas, and it is discharged by a high-frequency electromagnetic field to generate a glow discharge plasma. In this case, a netlike grid having an arbitrary pattern is set between the plasma and a base plate, and a bias is applied to the netlike grid by a DC constant-voltage generator. Consequently, an Si thin film wherein an amorphous Si phase region and an amorphous Si phase region containing crystallite are distributed in a constant order is formed on the base plate.