首页>
外国专利>
PROCESS FOR SELF-ALIGNING A LOCALIZED FIELD OXIDE AGAINST AN ISOLATION SLOT
PROCESS FOR SELF-ALIGNING A LOCALIZED FIELD OXIDE AGAINST AN ISOLATION SLOT
展开▼
机译:根据隔离槽自校准局部氧化物的过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
Process for the autopositioning of a local field oxide relative to an insulating trench. This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.
展开▼