method for removal of n - dotierenden impurities in the vapour deposition of silicon from a liquid or gaseous substances

摘要

the vapour deposition of silicon from a liquid or gaseous substances, such as hydrogen or trichlorsilan can n dotierende impurities, characterised by adduktbildung with silicon, titanium or zinnhalogeniden removed. from the addukten can by thermal treatment and finally released the impurities to be investigated.the remaining halides are able to adduktbildung again and again to remove the impurities. the procedure can thus be operated in a cycle and is characterized by low chemikalienbedarf and environmental friendliness.