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In gallium arsenide - technologie be led a semiconductor device

机译:砷化镓-引领半导体器件技术

摘要

Circuitry and semiconductor devices which can be implemented in gallium arsenide technology for generating a substantially constant reference voltage and for generating a substantially constant reference current are described. JFET transistors 80, 88 are connected in series and connected to the gate of JFET 96 in series with JFET 100. A variable resistor 98 and JFET 106 are coupled to a load 108. Transistors 80, 88 generate a constant voltage at mode B. Variable resistor 98 is constructed using a network of resistors connected by laser programmable fuses, allowing a desired overall resistance to be chosen. IMAGE
机译:描述了可以用砷化镓技术实现的用于产生基本恒定的基准电压并用于产生基本恒定的基准电流的电路和半导体器件。 JFET晶体管80、88串联连接,并与JFET 100串联连接到JFET 96的栅极。可变电阻器98和JFET 106耦合到负载108。晶体管80、88在模式B下产生恒定电压。电阻器98是由通过激光可编程熔丝连接的电阻器网络构成的,从而允许选择所需的总电阻。 <图像>

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