首页>
外国专利>
In gallium arsenide - technologie be led a semiconductor device
In gallium arsenide - technologie be led a semiconductor device
展开▼
机译:砷化镓-引领半导体器件技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
Circuitry and semiconductor devices which can be implemented in gallium arsenide technology for generating a substantially constant reference voltage and for generating a substantially constant reference current are described. JFET transistors 80, 88 are connected in series and connected to the gate of JFET 96 in series with JFET 100. A variable resistor 98 and JFET 106 are coupled to a load 108. Transistors 80, 88 generate a constant voltage at mode B. Variable resistor 98 is constructed using a network of resistors connected by laser programmable fuses, allowing a desired overall resistance to be chosen. IMAGE
展开▼