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Application of silicon carbide of high specific surface to catalytic reactions at elevated temperature

机译:高比表面积碳化硅在高温催化反应中的应用

摘要

Application of silicon carbide with a high specific surface of at least 100 m2 per gram, according to Claim 1 of the main patent application, to the use of catalytic reactions at elevated temperature, above 500 DEG C, and capable of being between 650 and 800 DEG C, such as the catalyst supports intended for the exhaust systems of internal combustion engines and for the controlled oxidation of hydrocarbons of low molecular mass, especially methane, to hydrocarbons of higher molecular mass and with a longer carbon chain.
机译:根据主要专利申请的权利要求1,将具有至少100m 2 / g的高比表面的碳化硅用于在高于500℃的高温下进行催化反应的应用。 650和800℃,例如用于内燃机排气系统的催化剂载体,以及用于将低分子量烃(尤其是甲烷)受控氧化为较高分子量和碳链较长的烃的催化剂载体。

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