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Application of silicon carbide of high specific surface to catalytic reactions at elevated temperature

机译:高比表面积碳化硅在高温催化反应中的应用

摘要

Application of silicon carbide of high specific surface of at least 100 m2 per gram, according to claim 1 of the main patent application, to the use of catalytic reactions at elevated temperature, higher than 500 DEG C and capable of being between 650 and 800 DEG C, such as the supports for catalysts intended for exhaust systems of internal combustion engines, and for controlled oxidation of hydrocarbons of low molecular mass, especially methane, to hydrocarbons of higher molecular mass and longer carbon chain. Active carbon of high specific surface, reacted with silicon monoxide, is preferably doped by impregnation with a solution of a salt of a polyvalent metal such as U, Ce, Ti, Zr, Hf and lanthanides.
机译:根据主要专利申请的权利要求1,将具有至少100m 2 / g的高比表面积的碳化硅用于在高于500℃且能够在650至650℃之间的高温下进行催化反应的用途。在800℃和800℃,例如用于内燃机排气系统的催化剂的载体,以及用于将低分子量的烃,特别是甲烷的受控氧化成较高分子量和较长碳链的烃的载体。与一氧化硅反应的高比表面积的活性炭优选通过用多价金属的盐如U,Ce,Ti,Zr,Hf和镧系元素的溶液浸渍来掺杂。

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