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Temperature-compensated LV bipolar IC source - has amplifier with NPN transistors in common-base configuration and load resistors whose ratio determines output voltage

机译:温度补偿的LV双极性IC源-具有带共基配置的NPN晶体管和负载电阻的放大器,其比率决定输出电压

摘要

The source includes an operational amplifier (A), temperature compensated and having a difference (V) between the input voltages at its inverting and non-inverting terminals. The amplifier comprises two NPN transistors, mounted in common-base configuration (Q1, Q2), their collectors being connected to a source circuit (13, 14). The transistor base is connected to a third NPN transistor (Q16) with its collector to a power supply. The source circuit consists of two PNP transistors (Q13, Q14) grounded through a third PNP transistor (Q15) and connected to a current source (20). The amplifier also comprises two resistors (R1, R2) placed between the base and emitter of the first NPN transistor and, respectively emitter and amplifier input. If VBE1 is the base emitter voltage of the first NPN transistor and delta VBE is the difference between the base emitter voltages of the two NPN transistors, then the voltage V is given by V = (R2/R1) VBE1 + deltaVBE. ADVANTAGE - Can provide low voltages, in range 1.25 V down to tens of millivolts.
机译:该源包括一个运算放大器(A),经过温度补偿,并且在其反相端子和同相端子的输入电压之间具有差异(V)。该放大器包括两个以公共基极配置(Q1,Q2)安装的NPN晶体管,它们的集电极连接到源电路(13、14)。晶体管基极连接到第三NPN晶体管(Q16),其集电极连接到电源。源电路由两个通过第三PNP晶体管(Q15)接地并连接到电流源(20)的PNP晶体管(Q13,Q14)组成。放大器还包括两个电阻(R1,R2),分别位于第一NPN晶体管的基极和发射极以及发射极和放大器输入之间。如果VBE1是第一个NPN晶体管的基极发射极电压,而增量VBE是两个NPN晶体管的基极发射极电压之间的差,则电压V由V =(R2 / R1)VBE1 + deltaVBE给出。优势-可提供低至数十毫伏的1.25 V低压。

著录项

  • 公开/公告号FR2628546A1

    专利类型

  • 公开/公告日1989-09-15

    原文格式PDF

  • 申请/专利权人 SGS THOMSON MICROELECTRONICS SA;

    申请/专利号FR19880003752

  • 发明设计人 MICHEL BAROU;

    申请日1988-03-09

  • 分类号G05F3/26;

  • 国家 FR

  • 入库时间 2022-08-22 06:29:57

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