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Static random access memory having structure of first-, second- and third- level conductive films
Static random access memory having structure of first-, second- and third- level conductive films
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机译:具有第一,第二和第三级导电膜的结构的静态随机存取存储器
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摘要
A resistance element having a reduced occupied area and a high resistance which may be employed as a load resistor used in, for example, a static memory device. A high-resistance area is formed using a relatively thin film, while an interconnection area is formed using a relatively thick film, and these films are provided in such a manner that the thin film is in contact with the upper side of the thick film (the relatively thick film is a first-level film, and the relatively thin film is a second-level film).
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