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Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt

机译:从浮动熔体的下表面向下拉单晶的方法和设备

摘要

An elemental or compound melt is floated on a denser encapsulent. The melt has two horizontal free surfaces (i.e., surfaces not in contact with a solid). A shaft including a seed crystal extends upwardly through the encapsulent to contact the lower free surface of the melt and then is withdrawn downwardly through the encapsulent to grow the crystal. During solidification mechanical stresses are not imposed on the crystal. The melt is heated from above so that the lower melt surface is colder than the upper melt surface which provides a strong stabilizing temperature gradient within the melt. Unsteady natural convective flows in the melt are eliminated. Steady natural convection is substantially decreased compared to the Czochralski process (CZ) and Liquid Encapsulated Czochralski process (LEC). The stoichiometric ratio in the melt is maintained by controlling the pressure of the volatile element over the upper free surface of the melt.
机译:元素或复合熔体漂浮在更密实的容器上。熔体具有两个水平的自由表面(即不与固体接触的表面)。包括籽晶的轴向上延伸穿过密封剂,以接触熔体的下部自由表面,然后通过密封剂向下抽出以生长晶体。在固化过程中,不会在晶体上施加机械应力。从上方对熔体进行加热,以使下部熔体表面比上部熔体表面冷,从而在熔体内部提供强大的稳定温度梯度。消除了熔体中不稳定的自然对流。与Czochralski工艺(CZ)和液体封装的Czochralski工艺(LEC)相比,稳定的自然对流显着降低。通过控制在熔体的上部自由表面上的挥发性元素的压力来维持熔体中的化学计量比。

著录项

  • 公开/公告号US4824519A

    专利类型

  • 公开/公告日1989-04-25

    原文格式PDF

  • 申请/专利权人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;

    申请/专利号US19870112499

  • 发明设计人 ALEKSANDAR G. OSTROGORSKY;

    申请日1987-10-22

  • 分类号C30B15/08;C30B35/00;

  • 国家 US

  • 入库时间 2022-08-22 06:28:14

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