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Method of forming III-V semi-insulating films using organo- metallic titanium dopant precursors
Method of forming III-V semi-insulating films using organo- metallic titanium dopant precursors
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机译:使用有机金属钛掺杂剂前体形成III-V半绝缘膜的方法
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摘要
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1× 10.sup.7 ohm/cm have been achieved.
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