Method of producing single crystalline magnetic film having bi- axial anisotropy

摘要

A single crystal Fe film is deposited on a (100) gallium arsenide substrate by ion beam sputtering the Fe film. The sputtered Fe atoms are imparted with energies in the range of about 1 electron volt to at least 10 electron volts to impart sufficient kinetic energy to said ions to allow said ions to have high surface diffusion rates, thereby permitting the atoms to be located at the proper lattice sites of the Fe crystal formed over the gallium arsenide substrate.