FORMATION OF EPITAXIAL LAYER HAVING ARBITRARY IMPURITY CONCENTRATION AT ARBITRARY POSITION

摘要

PURPOSE:To form an epitaxial layer of an arbitrary conductivity type and arbitrary impurity concentration in a single epitaxial deposition system by repeating the epitaxial deposition and impurity implantation. CONSTITUTION:An N-type epitaxial layer 102 is deposited on an N-type silicon substrate 101; boron, etc., is implanted in the layer 102 through a window 4 in a photoresist 103 so as to form a P-type impurity layer 15; then phosphorus or the like is implanted in the layer 102 through another window 107 in another photoresist 106 so as to form an N-type impurity layer 108; later the surface is annealed. Then, the same procedures are repeated to form an N-type epitaxial deposition layer 109 having P-type impurity leading-in layers 111, as well as an N-type epitaxial deposited layer 112, etc., having P-type impurity layers 113, an N-type impurity layer 114. Through these procedures, the epitaxial layer in arbitrary conductivity type and arbitrary impurity concentration can be formed at an arbitrary position in a single epitaxial deposition system.