首页> 外国专利> THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY DEVICE, CROSSOVER STRUCTURAL BODY AND MANUFACTURE THEREOF

THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY DEVICE, CROSSOVER STRUCTURAL BODY AND MANUFACTURE THEREOF

机译:用于液晶显示装置的薄膜晶体管,跨接结构体及其制造

摘要

PURPOSE: To form TFTs by a three mask method and to reduce the cost of production and to improve the yield thereof by forming a first conductive layer, second conductive layer and crossover structural body on an insulating substrate by using three masks. CONSTITUTION: A transparent electrode layer 12 and a doped layer 13 thereon are formed on the insulating substrate 11 and the first conductive layer 19 is formed on a dielectric layer 18 by using the first mask. The non-doped layer 17, the dielectric layer 18 and the first conductive layer 19 are selectively removed by using the second mask to constitute a part of the crossover structural body and the second conductive layer 21 is formed. The second conductive layer 21 is partly selectively removed by using the third mask, by which the part of the crossover structural body is formed. While four sheets of the masks are usually used to form the TFTs, the masks are decreased to three sheets, by which the yield is improve and the cost is reduced.
机译:用途:通过三掩模法形成TFT,并通过使用三个掩模在绝缘基板上形成第一导电层,第二导电层和跨接结构体来降低生产成本并提高其产率。构成:在绝缘基板11上形成透明电极层12和掺杂层13,并通过使用第一掩模在介电层18上形成第一导电层19。通过使用第二掩模选择性地去除非掺杂层17,介电层18和第一导电层19以构成交叉结构体的一部分,并且形成第二导电层21。通过使用第三掩模部分选择性地去除第二导电层21,由此形成交叉结构体的一部分。尽管通常使用四片掩模来形成TFT,但是掩模被减少到三片,从而提高了产量并且降低了成本。

著录项

  • 公开/公告号JPH02211429A

    专利类型

  • 公开/公告日1990-08-22

    原文格式PDF

  • 申请/专利权人 GENERAL ELECTRIC CO GE;

    申请/专利号JP19890273615

  • 申请日1989-10-19

  • 分类号G02F1/136;G02F1/1368;G09F9/30;H01L21/768;H01L23/522;H01L27/12;H01L29/78;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-22 06:24:19

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号