PURPOSE:To obtain a flat thin film at a high speed, by projecting charged particles on the thin film, which is formed on a irregular substrate. CONSTITUTION:As a substrate 10 having irregularities, e.g., a silicon oxide film is used. On said substrate 10, an Al film 11 is formed under the no-bias state by a sputtering method. Then, plasma is yielded, and charged particles (mainly ions), e.g., argon ions, are projected on the Al film 11 on the substrate 10 under the biased state. Then, the Al film 11 is fluidized by the increase in temperature and the impact of the accelerated charged particles. Thus a flat Al film 11' is obtained. In this way, the flat thin film can be formed at a high speed.
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