首页> 外国专利> Tunable semiconductor diode laser DISTRIBUTED WITH REFLECTION AND MANUFACTURING METHOD OF SUCH SEMICONDUCTOR LASER DIODE.

Tunable semiconductor diode laser DISTRIBUTED WITH REFLECTION AND MANUFACTURING METHOD OF SUCH SEMICONDUCTOR LASER DIODE.

机译:可调谐半导体二极管激光器,采用这种半导体激光二极管的反射和制造方法。

摘要

A tunable semiconductor diode laser with distributed reflection (DBR semiconductor lasers) having a wide wavelength range is a suitable transmitter or local oscillator in a receiver in heterodyne and coherent optical glass fibre communication systems. Such a diode comprises beside the Bragg section (c) in which the Bragg reflection takes place an active section (4) in which the radiation-emitting active region (13) is present. When such a semiconductor diode laser is further provided with a so-called phase section (B), tuning is possible over a large wavelength range within one oscillation mode. It has been found, however, that so-called forbidden zones where no oscillation within the given mode is possible are formed in the wavelength range over which the laser is tunable. According to the invention, a laser which is continuously tunable over the whole wavelength range is obtained by providing means (21) with which the intensity of radiation which is reflected at the junction between the active section (A) and the phase section (B) is made low with respect to the intensity of the radiation which returns from the phase section (B) to the active section (A). These means comprise an extra radiation-conductive layer (21) in the phase section (B) which adjoins and smoothly merges into the active region (13) situated in the active section (A). When the active section (A) is present centrally in the Bragg section (C) and the phase section (B) the means may also comprise a high-reflecting coating (56) which is present on a free side of the phase section (B). In the latter case the means may also comprise the said extra radiation-conductive layer. The extra radiation-conductive layer (21) and the active region of the first radiation-conductive layer (11) are preferably separated by a passive layer (12) having such a thickness that the said layers (11, 13) are situated within each others amplification profile.
机译:具有外波长和相干光学玻璃纤维通信系统中的接收器中的合适的发射器或本机振荡器是具有宽波长范围的具有分布反射的可调半导体二极管激光器(DBR半导体激光器)。这种二极管除了在布拉格部分(c)之外还包括发生布拉格反射的有源部分(4),在该有源部分中存在发射辐射的有源区域(13)。当这种半导体二极管激光器还具有所谓的相位部分(B)时,可以在一个振荡模式内在较大的波长范围内进行调谐。但是,已经发现,在激光器可调谐的波长范围内,在给定模式下不可能发生振荡的所谓的禁区。根据本发明,通过提供装置(21)来获得在整个波长范围上连续可调的激光器,利用该装置(21),在有源部分(A)和相位部分(B)之间的接合处反射的辐射强度被反射。相对于从相部分(B)返回到有源部分(A)的辐射强度而言,αγ较低。这些装置在相部分(B)中包括额外的辐射传导层(21),该辐射传导层邻接并平滑地合并到位于有源部分(A)中的有源区域(13)中。当有源部分(A)位于布拉格部分(C)和相部分(B)的中央时,该装置还可包括高反射涂层(56),该涂层位于相部分(B)的自由侧。 )。在后一种情况下,该装置还可以包括所述额外的辐射传导层。额外的辐射传导层(21)和第一辐射传导层(11)的有源区优选地被无源层(12)隔开,该无源层的厚度使得所述层(11、13)位于每个层内。其他扩增曲线。

著录项

  • 公开/公告号NL8803080A

    专利类型

  • 公开/公告日1990-07-16

    原文格式PDF

  • 申请/专利权人 N.V. PHILIPS GLOEILAMPENFABRIEKEN TE EINDHOVEN.;

    申请/专利号NL19880003080

  • 发明设计人

    申请日1988-12-16

  • 分类号H01S5/00;H01S5/0625;H01S5/227;

  • 国家 NL

  • 入库时间 2022-08-22 06:18:22

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