GALLIUM ARSENIDE CRYSTAL GROWN ON SILICON SUBSTRATE AND METHOD OF GROWING SUCH CRYSTAL

摘要

Abstract of the DisclosureA GaAs growth crystal comprises a Si substrate, anintermediate layer formed on the substrate and a GaAs layer grownon the intermediate layer. The intermediate layer includesconstituent GaP/GaAsP and GaAsP/GaAs superlattice layers andadditionally AIP and AlGaP thin films.