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Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage
Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage
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机译:具有高能量维持能力和温度补偿的维持电压的半导体器件
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摘要
A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes 28 and 71 between the drain 22 and the gate 20 of the semiconductor device. The diodes 28 protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes 28 and 71 are formed back-to-back in polysilicon 65. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.
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