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Titanium nitride film in contact hole with large aspect ratio
Titanium nitride film in contact hole with large aspect ratio
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机译:纵横比大的接触孔中的氮化钛膜
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摘要
A semiconductor device includes a titanium nitride film as a barrier which is formed in a hole. The width or diameter of the hole is smaller than 1 &mgr;m, and the aspect ratio thereof is larger than 0.7. The sidewall of the hole is substantially perpendicular to the surface of a semiconductor substrate. By the low pressure CVD method with a cold wall type CVD apparatus, it becomes possible to form the titanium nitride film having excellent characteristics with a good step coverage in a considerably fine hole having a large aspect ratio.
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