SPUTTERING APPARATUS FOR FORMING A CONDUCTIVE FILM IN A CONTACT HOLE OF A HIGH ASPECT RATIO

摘要

The present invention provides a sputtering apparatus including a sputtering reaction chamber. The target is provided to the sputtering reaction chamber. The shield plate is provided near the target. The emitter is electrically connected to the shielding plate to release ionized sputter particles and neutral sputter particles from the target so that they fall at various angles into the subspace located below the target in the sputtering reaction chamber. The substrate holder is provided in the sputtering reaction chamber. The substrate holder is spaced laterally from the lower space to hold the substrate so that the substrate surface is vertical. A generator is provided to generate a lateral static field to be applied over the laterally extending space including the subspace and the substrate holder, wherein the electrostatic field is provided for substrates with ionized sputter particles only. Laterally accelerated toward the substrate secured by the holder, allowing ionized sputter particles to be lateral deposited onto the substrate surface.